Swimming microrobots are expected to play an important role in medical actuators most important elements of the micro fins device
| Fabrication Sequence Diagrams
(Note: The diagrams are not drawn in scale) |
Steps and Explanations |
| SiO2
Si 1. Start with commercial oxidized Si wafer Step 1 bottom view SiO2 |
Step 1: Start with Commercial Oxidized Si Wafer Comments SiO2 serves the important role as the base layer for structures such as the micro-fins, hinges, and actuators to be built upon. SiO2, an insulator, also separates Si from metal electrodes so the electrodes are not shorted out. |
| Photoresist 1813
2. Pattern photoresist 1813 with mask 1 Step 2 bottom view SiO2 Photoresist 1813 Mask 1 |
Step 2: Pattern Photoresist 1813 with Mask 1 Explanation The developer that will be used is developer 352. Photoresist 1813 protects SiO2 that is underneath it from etchants. The attached mask 1 is used during the UV light exposure step of the patterning process. Since photoresist will almost always work, no alternative is considered. |
| 3. BHF etch away SiO2
Step 3 bottom view Photoresist 1813 Si |
Step 3: Etch SiO2 with BHF Explanation SiO2 is etched in order to reach the silicon surface underneath it and then etch the silicon to form cavities so the micro-fins can flap. BHF is chosen to wet etch SiO2 for a couple of reasons. 1. It is readily available in University of Maryland. 2. It can be done in a few minutes, representing a faster process. 3. Since BHF does not attack silicon, the etch result is usually satisfactory. The drawback of using BHF, however, is undercutting. Undercutting occurs when SiO2 under photoresist is also etched. But since my goal is to etch silicon and form cavities, and since the dimension of the cavities is not that critical, undercutting will not be a very serious problem. The dry etching alternative to BHF wet etching is using commercial gases such as CF4 + O2 (10%) or CHF3. Unfortunately, the RIE system in University of Maryland is not equipped with such gases. Purchasing these gases may be over the budget for MEMS 2 class. So there is actually no alternative method to etch SiO2 in University of Maryland. |
| 4. DRIE etch away Si
Photoresist 1813 SiO2 Step 4 bottom view |
Step 4: Etch Si using DRIE Explanation In this step, silicon is etched away in order to make cavities so eventually the micro-fins will have room to flap during the testing stage. DRIE is chosen because straight sidewalls are desired. The straight sidewalls will reduce the overall size of devices and ultimately the cost, since more devices can be fabricated on one wafer. Another reason is the availability. University of Maryland has a DRIE system that is ready to go. However, using DRIE has several drawbacks. 1. The whole 500 μm of silicon will be etched away, it will take a very long time (in the order of 10 hours) to dry etch silicon that thick with DRIE. 2. The expense of using the machine is great. The alternative to DRIE is wet etching of silicon. Out of the chemicals that can be used, KOH is the safest and readily available in University of Maryland. Therefore, in the case that DRIE machine breaks down, wet etching silicon with KOH will be the alternative procedure. The downside to this alternative procedure is that the mask must be re-designed as the result. In the case of KOH etching, the sidewalls will be slanted at an angle of 54.7˚. As the result, the dimension of the cavities shown on the mask must be much larger. |
| 5. Remove photoresist 1813
Top SiO2 layer Step 5 bottom view Bottom SiO2 layer |
Step 5: Remove Photoresist 1813 Explanation There are several resist strippers available to remove photoresist 1813. Alternatively, one can expose the photoresist without any masks and then develop the photoresist. In the case that photoresist is over-baked; piranha can be used to remove the photoresist as well. In this fabrication sequence, assuming photoresist is not over-baked, UV light exposure with no masks and development of photoresist will be chosen as the method to remove photoresist. The choice is rather arbitrary and is based on the familiarity with the material and the steps involved. If KOH is used to etch silicon in the previous step, this step is not necessary. It is shown repeatedly during the lab period that photoresist does not withstand KOH as it is removed as soon as wafers with photoresist are immersed in KOH. Comments In the bottom view picture, there are actually two different layers of SiO2 – the bottom layer that surrounds the cavities and the top layers that locate at the very bottom of the cavities. |
| Cr
6. Thermally evaporate Cr Step 6 top view Cr |
Step 6: Deposit Cr Explanation There are three different methods to deposit Cr – thermal evaporation, electron beam evaporation, and sputtering. University of Maryland is capable of all three methods. The choice for one method over the other is arbitrary and may be determined primarily on equipment availability. The film thickness should be around 3 nm because it serves only as an adhesion layer for Au portions that serve as hinges, wires and the electrode. |
| 7. Pattern photoresist 1813 with mask 2
Photoresist 1813 B’ A’ B’ Step 7 top view A’ Photoresist 1813 Cr Mask 2 |
Step 7: Pattern Photoresist 1813 on Cr with Mask 2 Comments Due to the complexity in shape of the photoresist pattern, dash cross section line is specified on the top view device diagram. In the following steps, the cross section diagram is assumed to follow the same dash cross section line unless otherwise noted. |
| 8. Cr etchant wet etch away Cr
Cr under photoresist 1813 Step 8 top view |
Step 8: Etch Cr with Cr Etchant Explanation There may be more than one Cr etchant available in industry; however, there is only one type of Cr etchant available in University of Maryland. Furthermore, dry etch of Cr is not a possibility. So there is no choice in terms of choosing how to etch Cr in University of Maryland. The drawback of this process is that it is time controlled and the etch duration for this process is rather short (in the order of 10 seconds). If etched for too long, Cr underneath photoresist may be undercut. It is possible, however, to dilute the Cr etchant to slow the etch rate down. |
| 9. Remove photoresist 1813
Step 9 top view Cr |
Step 9: Remove Photoresist 1813 off Cr |
| 10. Thermally evaporate Au
Au Step 10 top view Au |
Step 10: Deposit Au Explanation Just like the case of Cr, Au deposition can also be done by thermal evaporation, electron beam deposition or sputtering. In this case, since the step coverage is not an issue in the design, the choice for one method over the other is arbitrary and may be determined by equipment availability again. The film thickness of the Au layer should be around 100 nm so Au will effectively cover the entire patterned Cr surface; additional explanation for Au film thickness is in section 4. The technique to deposit Au on patterned Cr is part of a broader technique called differential adhesion demonstrated by Smela [4]. The reason this technique is used is because Au makes the bottom layer of both the actuator and micro-fins and needs to be released from SiO2 upon actuation. This technique takes advantage of the fact that Au does not adhere to SiO2. More details on differential adhesion will be given in the next step. Comments Au layer in this step serves both a mechanical role in the bilayer and as an electrode for the electrochemical deposition of PPy. |
A’ Photoresist 1813 B’ C’ Photoresist 1813 D’ 11(b). Pattern photoresist 1813 with mask 3 C’ B’ A’ Step 11 top view Cr and Au under photoresist 1813 Au under photoresist 1813 D’ Mask 3 |
Step 11: Pattern Photoresist 1813 on Au with Mask 3 Explanation Notice that mask 3 used to pattern Au is different from mask 2 that is used in Step 7 and 8 to pattern Cr. Also notice that the Au in cross section from A’ to B’ is on top of a layer of Cr but the Au in cross section from C’ to D’ (the portion of actuator and micro-fins) is directly on top of SiO2. Upon actuation, the actuator and micro-fins will lift off from SiO2 because Au does not adhere to SiO2 well. Comments Notice there are two dash cross section lines in the top view device diagram to demonstrate the concept of differential adhesion. In the following steps, if the diagrams are not specified, it is assumed that the cross section diagrams are based on the same cross section from A’ to B’. |
| A’
12. Au etchant wet etch away Au B’ B’ A’ Step 12 top view |
Step 12: Etch Au with Au Etchant Explanation As the case of Cr, there is more than one method to etch Au. However, etching Au with wet iodine based etchant is effective and can be done in a relatively short period of time (in the order of 1 minute). Again, the drawback is that the etch process is time controlled and undercut may occur. But at University of Maryland, etching Au with wet Au etchant is a standard process and can be easily done. |
| 13. Remove photoresist 1813
Only Au on SiO2 Cr and Au on SiO2 Step 13 top view |
Step 13: Remove Photoresist 1813 off Au |
| 14. Pattern SU8 photoresist with mask 4
D’ SU8 C’ Step 14 top view D’ C’ SU8 Mask 4 (negative mask for SU8) |
Step 14: Pattern SU8 on Au Explanation SU8 is chosen for this step because it is thick (on the order of a few microns to around a hundred microns), can be permanently deposited on Au and is readily available in University of Maryland. SU8 serves two purposes for the micro-fins devices. 1. Increase the thickness and thus robustness of micro-fins. Without SU8, the micro-fins consist of Au that is 100 nm (explained in section 4). By adding a few microns of SU8, the fins will be thicker and more robust. 2. In the next step, PPy will be electrochemically deposited on Au that is not covered by SU8. Since SU8 is not conductive, Au hidden underneath SU8 will not be electroplated with PPy. So SU8 also acts as a patterning component for the next step. The drawback, however, is that there is no alternative methods to SU8. Comments Notice the mask for SU8 is the negative masks for those used with photoresist 1813. This is because SU8 is a negative photoresist. This means the portion of SU8 that is not exposed to UV light (black region on the mask) will actually dissolve away during development. |
| F’
15. Deposit PPy PPy E’ PPy/Au Bilayer F’ PPy Step 15 top view E’ |
Step 15: Electroplate PPy Explanation PPy can be electrochemically deposited on a conducting surface such as Au [5]. This process is sometimes called electroplating as well. When PPy is electroplated on Au, a bilayer forms. This bilayer serves as the actuator of the device. The reason PPy is chosen is because it is extensively studied in University of Maryland. Therefore, PPy is well understood to some extend and is readily available in University of Maryland. Another advantage to use PPy in PPy/Au bilayer structure is the large displacement in actuation. There are other actuators that utilize similar bilayer ideas. An example is thermal bimorph actuators. Thermal bimorph actuators can potentially be an alternative to PPy/Au bilayer actuator if it fails. However, the fabrication sequence may be significantly changed if thermal bimorph actuators are needed. Comments Notice another different cross section between E’ and F’ is examined in the diagrams. This cross section is used to demonstrate that PPy is electroplated on Au. |
| F’
16. Release Micro-fins E’ Step 16 top view Cavity F’ E’ |
Step 16: Release Micro-fins Explanation Smela reported that when PPy is electrochemically oxidized and reduced, PPy/Au bilayer actuator bends and lifts off from SiO2 surface [5]. Since the fins are also made by depositing Au directly on SiO2, the fins will (hopefully) be released from the SiO2 surface as they flap up. Since the fins will be a few times thicker than the SiO2 layer, it is theorized that the fins will break the layer when they flap down. Comments
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3.2 Masks
The magnified, but not-in-scale version of masks is diagramed in the previous section. The real masks are attached below in Figure 13. These masks are drawn in Adobe Illustrator CS. For each mask, an individual mask and a collection of seven masks arranged on a quarter-wafer are shown. Seven is the maximum number of devices that can fit on a quarter-wafer.
Figure 13: The four masks that will be used to microfabricate the micro-fins device. All of the masks are scaled correctly. Refer to section 3.1 for larger but unscaled version of these masks. In Figure 13, an individual mask and a collection of seven masks arranged on a quarter-wafer are shown for each mask. Seven is the maximum number of devices that can fit on a quarter-wafer. Mask 1 is used to pattern the SiO2 mask layer so Si can be etched to form cavities. Mask 2 is used to pattern Cr. Cr serves as the adhesion layer between SiO2 and Au. Mask 3 is used to pattern Au. The additional areas in mask 3 compared to mask 2 represents the actuators and the micro-fins. The actuators and the fins will be released upon actuation. This is why the actuators and the micro-fins are fabricated with Au base layer directly deposited on SiO2 without Cr. Finally, mask 4 is used to pattern SU8. Since SU8 is a negative photoresist, the dark field and the light field of mask 4 is revered. The light field represents the area that will be covered with SU8 after SU8 photoresist development.
4. Device Design
In order to fit the dimension of the ant-like microrobot, the support beam is set to be 4 mm in length. The width is set to be 1 mm wide so it will be robust enough to hold the hinges mechanically. As the result, the cavities will be 4 mm long as well. The cavities are symmetric with respect to the support beam and are 2 mm in width. They are 2 mm wide so the hinges, the actuators and the micro-fins can fit inside. The support frame on each side for an individual device is 2.5 mm. Therefore the two neighboring devices are separated by 5 mm on each side. In addition, the support frame is 5 mm wide in the bottom. So the separation between the top devices and the bottom devices is also 5 mm as well. The overall size of each device, equipped with electrode and surrounded by the support frame is 20 mm in length and 10 mm in width. Seven complete devices can fit on the quarter of a 4-inch wafer. Figure 13 below shows 600%-magnified mask 1 and the dimension of the support beam, the cavities and the support frame.
Figure 13: Magnified mask 1 and dimension of the support beam, the support frame and the cavities. Mask 1 is used to pattern SiO2.
In order to establish physical connection between the electrode and the potentiostat, the electrode must be relatively big. The dimension of the electrode will be arbitrarily chosen as 5 mm by 5 mm. Alligator clips are usually used to clip on the electrode in order to make this physical connection from the potentiostat to the device. When alligator clips are dipped in the electrolyte, electrochemistry will fail to work properly. Therefore, there should be a relatively big separation between the electrode, which will not be immersed in the electrolyte, and the actuators. The separation will be set at 6.8 mm to make sure the alligator clip will not be immersed in electrolyte by accident. This is sufficient enough because alligator clips will not be clipped in such a way that it extends to the bottom end of the electrode. The 6.8-mm gap includes 6 mm from the end of the electrode to the starting point of the support beam, a 0.2 mm separation between the sidewalls of the cavities to the, the first pair of hinges that are 0.2 mm wide as well, and 0.4 mm separation between the first pair of hinges and the second pair of the hinges.
The fins are 2.5 mm in length and 1.6 mm in width. They are evenly symmetric with respect to the support beam in the middle. The bottom end of the fins is separated from the sidewalls of the cavities by a 0.3-mm gap. On the side, the gap between the sidewalls and the fins is 0.2 mm while the gap between the support beam and the fins is also 0.2 mm. The fins are visible by eyes because the device must be vertically immersed in electrolyte when testing. It will be hard to observe the flapping under a microscope this way of the device is not visible by eyes.
Smela reported that PPy/Au bilayer actuators 30 µm by 30 µm is capable of lifting rigid areas of 900 µm by 900 µm [5]. Since the rigid area of the each fin is 2500 µm by 1600 µm, the actuator for each fin must be several times bigger. In order to be absolutely sure that the actuators will be able to lift the fins, two actuators, each 0.4 mm long and 0.2 mm wide are used.
Finally, alignment marks are employed for masks 2, 3 and 4. The alignment marks are important because there are many small features in the later steps of the fabrication sequence. Figure 14 below shows the 600%-magnified mask 3. Dimensions of the electrode, the micro-fins, the hinges, and the actuators are also given.
The thickness of different layers should also be considered. Cr should be really thin because it only serves as the adhesion layer. Thickness under 100 Å will be sufficient enough for this application. Au should be much thicker than Cr to cover the patterned Cr. Again, Au serves both the passive layer in the bilayer actuator and as an electrode for electrochemical deposition of PPy. Based on the report by Smela et al., 1000 Å is a good thickness for Au [7]. It is also reported by Smela et al. that actuation speed of PPy/Au bilayer actuators depend on the thickness of PPy thin film [7]. They find that the response time of the actuator increases as the thickness of PPy thin film increases. Since the micro-fins cannot flap too slowly, the thickness of PPy should be relatively thin. Smela et al. used PPy around 1 µm in thickness because the thickness is regulated by the thickness of photoresist in their fabrication process. For the purpose of this project, 0.5 µm should be the appropriate thickness for PPy. Finally, SU8 should be much thicker than all other materials. It is hoped that the micro-fins should be able to break the SiO2 layer upon actuation and then flap up and down once they are free to move. Since the thickness of the SiO2 layer is 0.5 µm, SU8 should be a couple of times thicker than SiO2. Thickness of 4 to 5 µm for SU8 should be sufficient for this design. Table 1 below records the thickness of each material.
| Layer/Material | Thickness (diff. Units) |
| Cr | < 100 Å |
| Au | 1000 Å |
| PPy | 0.5 µm |
| SU8 | 4~5 µm |
Table 1: Different layers of material and their corresponding thicknesses.
Figure 14: Magnified mask 3. Dimensions of the electrode, the hinges, the micro-fins and the actuators are given as well. Mask 3 is used to pattern Au. In all three of mask 2, 3 and 4, alignment marks are added because the features are too small of naked-eye alignment.
5. Discussion
Despite the advantages such as requiring low voltages for actuation and working at room and/or body temperature, PPy/Au bilayer actuators have some limitations, especially when applied in microrobotics.
First, the efficiency of PPy/Au bilayer actuators is low. Smela et al. reported 0.2% efficiency for their bilayer actuators used in moving and positioning bulk micromachined silicon plates [7].
Next, the actuation of PPy/Au bilayer actuator is low. Accodring to Smela et al., the fastest rate for bilayer actuators with PPy thickness of 1 µm to go from completely bent to completely straight and back was 2.5 Hz [5]. Usually, the actuation frequency for PPy/Au bilayer actuators to complete one cycle of actuation is around 1 Hz. The actuation speed of the actuators is limited by ion transport in and out of PPy thin film. As the result of slow actuation, the fins will flap slowly as well. Slow flapping translates to slow swimming speed, which is undesirable.
Another limitation is that the device can only be actuated in liquid electrolyte. This is because PPy thin film will only change volume in liquid electrolyte [7]. While this characteristic may be helpful in biomedical applications, it also limits the application of PPy/Au-bilayer-actuator-related devices. For example, for investigation and maintenance of small pipes in a radiator, the swimming microrobot design presented in this report will not be applicable.
Finally, the life-time of the actuator presents concerns as well. Typical PPy/Au bilayer actuators fail after 1,000 to 10,000 cycles of actuation. Failure is caused by delamination of PPy thin film from Au thin film [7]. This presents a problem for the long-term performance of the microrobot.
6. References
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[12] T. Fukuda, A. Kawamoto, F. Arai, H. Matsuura, “Mechanism and swimming experiment of micro mobile robot in water,” in Proc. MEMS, 1994, pp. 273-278.
[13] T. Fukuda, A. Kawamoto, F. Arai, H. Matsuura, “Steering mechanism and swimming experiment of micro mobile robot in water,” in Proc. MEMS, 1995, pp. 300.
[14] Y. Zhang, X. Wang, T. Mei, Q. Wang, P. Zhang, “Driving principle and dynamic analysis of a micro swimming robot,” in Proc. WCICA, 2004, vol. 5, pp. 4582-4586.
[15] M. G. Borgen, G. N. Washington, G. L. Kinzel, “Design and evolution of a piezoelectrically actuated miniature swimming vehicle,” IEEE/ASME Trans. Mechatronics, vol. 8, issue 1, pp. 66-76, March 2003.
[16] G. Laurent, D. Piat, “Efficiency of swimming microrobots using ionic polymer metal composite actuators,” in Proc. IEEE-ICRA, 2001, vol. 4, pp. 3914-3919.
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